mixers - chip 3 3 - 1 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc330 gaas mmic sub-harmonically pumped mixer, 25 - 40 ghz v01.0301 general description features functional diagram sub-harmonically pumped (x2) lo input ip3: 17 dbm 2lo/rf isolation: 48 db small size: 0.97 mm 2 electrical speci cations, t a = +25 c typical applications the hmc330 is ideal for: ? lmds ? point-to-point radios ? satcom * unless otherwise noted, all measurements performed as downconverter, if= 2.5 ghz. the hmc330 mmic is a broadband double bal- anced sub-harmonically pumped passive mixer that may be used as an upconverter or downcon- verter. the mixer requires no external matching or bias. this design was optimized to provide better 1db compression performance as com- pared to the hmc266 under the same lo drive levels. the hmc330 provides greater than 38 db lo to rf and 2lo to rf isolation performance. measurements were made with the chip mounted and ribbon bonded into a 50-ohm microstrip test xture that contains 5-mil alumina substrates between the chip and k-connectors. measured data includes the parasitic effects of the assem- bly. rf connections to the chip were made with 0.076 mm (3-mil) ribbon bond with minimal length <0.31mm (<12 mil). parameter lo = +14 dbm, if = 2.5 ghz units min. typ. max. frequency range, rf 25 - 40 ghz frequency range, lo 12.5 - 20 ghz frequency range, if 2 - 4 ghz conversion loss 13 17 db noise figure (ssb) 13 17 db 2lo to rf isolation 40 48 db lo to rf isolation 30 38 db 2lo to if isolation 50 60 db rf to if isolation 27 37 db lo to if isolation 38 48 db ip3 (input) +13 +17 dbm 1 db compression (input) +4 +8 dbm
mixers - chip 3 3 - 2 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc330 v01.0301 conversion gain vs. temperature @ lo = +14 dbm conversion gain vs. lo drive upconverter performance conversion gain @ lo = +14 dbm isolation @ lo = +14 dbm if bandwidth @ lo = +14 dbm return loss@ lo = +14 dbm -20 -15 -10 -5 0 20 25 30 35 40 +25c -55c +85c conversion gain (db) frequency (ghz) -80 -70 -60 -50 -40 -30 -20 -10 0 20 25 30 35 40 rf/if lo/rf lo/if 2lo/rf 2lo/if isolation (db) frequency (ghz) -20 -15 -10 -5 0 20 25 30 35 40 conversion gain (db) frequency (ghz) +14 dbm +12 dbm +8 dbm +10 dbm +16 dbm -15 -10 -5 0 0 5 10 15 20 25 30 35 40 lo rf return loss (db) frequency (ghz) -20 -15 -10 -5 0 012345 return loss conversion gain response (db) frequency (ghz) -20 -15 -10 -5 0 20 25 30 35 40 conversion gain (db) frequency (ghz) gaas mmic sub-harmonically pumped mixer, 25 - 40 ghz
mixers - chip 3 3 - 3 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc330 v01.0301 gaas mmic sub-harmonically pumped mixer, 25 - 40 ghz mxn spurious outputs as a down converter input ip2 vs. temperature @ lo = +14 dbm * input ip3 vs. lo drive * input ip2 vs. lo drive * input ip3 vs. temperature @ lo = +14 dbm * * two-tone input power = -10 dbm each tone, 1 mhz spacing. input p1db vs. temperature @ lo = +14 dbm nlo mrf 5 4 3 2 1 0 -3 -2 71 -1 71 44 61 0355 1x6126 27585 3 rf = 30.5 ghz @ -10 dbm lo = 14 ghz @ +14 dbm all values in dbc below if output power level. 10 15 20 25 30 20 25 30 35 40 +12 dbm +14 dbm +16 dbm ip3 (dbm) frequency (ghz) 80 85 90 95 20 25 30 35 40 -55c +25c +85c ip2 (dbm) frequency (ghz) 80 85 90 95 20 25 30 35 40 +12 dbm +14 dbm +16 dbm ip2 (dbm) frequency (ghz) 5 6 7 8 9 10 11 12 13 14 15 25 30 35 40 +25c -55c +85c p1db (dbm) frequency (ghz) 10 15 20 25 30 20 25 30 35 40 -55c +25c +85c ip3 (dbm) frequency (ghz)
mixers - chip 3 3 - 4 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc330 v01.0301 gaas mmic sub-harmonically pumped mixer, 25 - 40 ghz outline drawing absolute maximum ratings rf / if input +13 dbm lo drive +27 dbm storage temperature -65 to +150 c operating temperature -55 to +85 c notes: 1. all dimensions are in inches [mm]. 2. die thickness is .004. 3. typical bond pad is .004 square. 4. backside metallization: gold. 5. bond pad metallization: gold. 6. backside metal is ground. 7. connection not required for unlabeled bond pads. % , % # 4 2 / 3 4 ! 4 ) # 3 % . 3 ) 4 ) 6 % $ % 6 ) # % / " 3 % 2 6 % ( ! . $ , ) . ' 0 2 % # ! 5 4 ) / . 3 die packaging information [1] standard alternate wp-8 [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
mixers - chip 3 3 - 5 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc330 v01.0301 gaas mmic sub-harmonically pumped mixer, 25 - 40 ghz mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab
mixers - chip 3 3 - 6 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com discontinued product not recommended for new designs hmc330 v01.0301 gaas mmic sub-harmonically pumped mixer, 25 - 40 ghz notes:
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